| PART |
Description |
Maker |
| K4H560838J |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H560438H K4H560438H-UC_LA2 K4H560438H-UC_LB0 K4H |
256Mb H-die DDR SDRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| K4H560838E-VC/LB3 K4H560438E-VC/LB3 K4H560438E-VC/ |
256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片DDR SDRAM内存规格54 sTSOP与铅二无（符合RoHS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NT256D64S88A0G NT256D64S88A0G-7K NT256D64S88A0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 32x8 SDRAM
184pin One Bank Unbuffered DDR SDRAM MODULE 一位银行无缓冲184pin DDR SDRAM内存模块
|
NANYA
ETC
Electronic Theatre Controls, Inc.
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EBD25RB4ALFB EBD25RB4ALFB-1A EBD25RB4ALFB-75 EBD25 |
256MB Registered DDR SDRAM DIMM
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC
|
Elpida Memory
|
